n-channel enhancement mode vertical dmos fet issue 1 ? april 94 features * 170 volt bv ds applications * telephone handsets absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 170 v continuous drain current at t amb =25c i d 160 ma pulsed drain current i dm 2a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 700 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 170 v i d =10 m a, v gs =0v gate-body leakage i gss 100 na v gs = 15v, v ds =0v zero gate voltage drain current i dss 10 50 m a m a v ds =170 v, v gs =0 v ds =140 v, v gs =0v, t=50c (2) on-state drain current(1) i d(on) 100 ma v ds =3v, v gs =3.3v static drain-source on-state resistance (1) r ds(on) 23 23 w w v gs =3.3v,i d =100ma v gs =3v,i d =30ma (1) measured under pulsed conditions. width=300 m s. duty cycle 2% e-line to92 compatible ZVN0117ta page no d g s
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